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650V high-voltage power transistors CoolMOS C6/E6 PDF 打印 E-mail

Infineon Technologies AG has introduced a new 650V CoolMOS C6/E6 high-performance power MOSFET series . The product range will merge together the advantages of modern super junction (SJ) device (such as low resistance and low capacitive switching losses) and easy-control switching behavior, and the high solid of body diode. Based on the same technology platform, C6 devices are optimized for usability, while the E6 devices are designed to provide maximum efficiency. 

 

CoolMOS C6/E6 is the sixth generation market-leading high-voltage super junction power MOSFET from Infineon's. The new 650V CoolMOS C6/E6 devices has fast, controllable switching performance ,suitable for that application keyed at efficiency and power density. 650V CoolMOS C6/E6 device is easy to use, is the ideal choice of a variety of energy-efficient products, such as notebook adapters, solar inverters and other additional margin breakdown voltage switching power supply (SMPS) products.

Infineon HVMOS power discrete devices product manager Jan-Willem Reynaerts said: "The new 650V C6/E6 product series is the useful supplement for previously announced CoolMOS 600V C6/E6 products series of Infineon ,to ensure that those power supply products needed 650V breakdown voltage can enjoy various advantages of our sixth generation CoolMOS technology. In this sense, CoolMOS C6/E6 make our customers upgrade from C3 series which has the big success smoothly.

Relative to the CoolMOS C3 650V series, the storage capacity of new 650V CoolMOS C6/E6 device output capacitance (Eoss) fall about as much as 20 percent, while C6/E6 is go through the improved body diode devices to have a higher tolerance to the hard commutation, and reverse recovery charge reduced to about 25%. Which is profit from the balance design of tuning grid resistance, switching behavior of C6/E6 device can avoid rate of change of excessive voltage and current.

 
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